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PTF210301
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
Description
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
* * Broadband internal matching Typical two-carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = -37 dBc Typical CW performance - Output power at P-1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power
Two-Carrier WCDMA Drive-Up
f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB, 10 MHz Carrier Spacing, VDD = 28 V, IDQ = 380 mA
-25 Efficiency 30 25
*
IM3 (dBc), ACPR (dBc)
-30 -35 -40 -45 -50 ACPR -55 30 32 34 36 38 40 IM3
*
Drain Efficiency (%)
20 15 10 5 0
* * *
PTF210301A Package 20265
Average Output Power (dBm)
PTF210301E Package 30265
RF Characteristics at TCASE = 25C unless otherwise indicated
WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 380 mA, P OUT = 36.5 dBm
f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion Gain Drain Efficiency
Symbol
IMD Gps hD
Min
-- -- --
Typ
-44 16 20
Max
-- -- --
Units
dBc dB %
Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 380 mA, POUT = 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps D IMD
Min
14.5 15 --
Typ
16 18 -47
Max
-- -- -42
Units
dB % dBc
ESD: Electrostatic discharge sensitive device -- observe handling precautions! Data Sheet 1 2003-12-22
PTF210301
DC Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 380 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.26 3.2 --
Max
-- 1.0 -- 4 1.0
Units
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 30 W CW) PTF210301A PTF210301E TSTG RJC RJC PTF210301E PD PTF210301A
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 116 0.67 145 0.83 -40 to +150 1.5 1.2
Unit
V V C W W/C W W/C C C/W C/W
Typical Performance (data taken in a production test fixture)
Power Sweep, CW Conditions
V DD = 28 V, IDQ = 380 mA, f = 2170 MHz
18 Efficiency 55 45 35 25 15 5 0 10 20 30 40
Broadband Performance
V DD = 28 V, IDQ = 380 mA, POUT = 39.5 dBm
35 0
Gain (dB), Efficiency (%)
Input Return Loss (dB)
30 25 20 15 Gain Efficiency Return Loss
-5 -10 -15 -20
16 15 14 13
Gain
10 -25 2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Output Power (W)
Data Sheet
2
2003-12-22
Drain Efficiency (%)
17
Gain (dB)
PTF210301
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
V DD = 28 V, f = 2140 MHz, Tone Spacing = 1 MHz
-25
Intermodulation Distortion Products vs. Tone Spacing
-25
V DD = 28V IDQ = 380 mA, f = 2140 MHz, Output Power = 44.75 dBm PEP
Intermodulation Distortion (dBc)
-30
3rd Order IMD (dBc)
455 mA 420 mA
-30 -35 -40 -45 -50 -55 -60 7th 5th 3rd Order
-35 -40 -45 -50 -55 -60 32
345 mA 380 mA 300 mA 34 36 38 40 42 44 46
-5
5
15
25
35
Output Power, PEP (dBm)
Tone Spacing (MHz)
Two-Tone Drive-Up at Optimum IDQ
V DD = 28 V, IDQ = 380 mA, f = 2140 MHz, Tone Spacing = 1 MHz
Intermodulation Distortion (dBc)
-20 -25 -30 -35 -40 -45 -50 -55 -60 -65 32 36 40 44 48 IM7 IM5 Efficiency IM3 45 40 35 30 25 20 15 10 5 0
Single-Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 380 mA, f = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% Clipping, P/A R = 8.7 dB, 3.84 MHz BW
-35 Efficiency 30
Drain Efficiency (%)
20 -45 ACPR Up -50 10 -55 -60 28 32 36 40 ACPR Low
0
Output Power, PEP (dBm)
Average Output Power (dBm)
Data Sheet
3
2003-12-22
Drain Efficiency (%)
-40
Adjacent Channel Power Ratio (dB)
PTF210301
Typical Performance (cont.)
IM3, Drain Efficiency and Gain vs. Supply Voltage
IDQ = 380 mA, f = 2140 MHz, Tone Spacing = 1 MHz, Output Power (PEP) = 44.75 dBm
-10 -15 -20 -25 IM3 Up -30 -35 -40 -45 23 24 25 26 27 28 29 30 31 32 33 Gain 25 20 15 10 Efficiency 45 40
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage. Series show current.
1.03
3rd Order Intermodulation Distortion (dBc)
Normalized Bias Voltage
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 20 60 100 0.20 0.77 1.33 1.90 2.47 3.03
35 30
Gain (dB), Drain Efficiency (%)
Supply Voltage (V)
Case Temperature (C)
Broadband Circuit Impedance Data
O
D
Z0 = 50
Z Source
Z Load
0.1
G
0.0 0.1 0.2 0.3 0.4
TOW ARD LOAD GTHS
S
Z Source Z Load
2210 MHz
0.1
Frequency
MHz 2070 2110 2140 2170 2210 R
Z Source
jX -4.3 -3.8 -3.6 -3.6 -3.7 R 5.5 5.1 4.8 4.4 4.0 12.6 13.5 14.2 15.0 16.1
Z Load
jX -5.7 -5.4 -4.9 -4.6 -4.3
2070 MHz 2070 MHz
2210 MHz
WAV <---
E L EN
0. 2
3
Data Sheet
4
2003-12-22
0.5
PTF210301
Test Circuit
ERS210301-1
Test Circit Schematic for f = 2170 MHz
DUT PTF210301 LDMOS Transistor
PCB Microstrip
0.76 mm. [.030"] thick, r = 4.5 Electrical Characteristics at 2170 MHz 0.102 , 50 0.078 , 22.8 0.098 , 42.8 0.053 , 11.6 0.136 , 74 0.373 , 54.5 0.054 , 11.6 0.047 , 18.2 0.019 , 28.5 0.019 , 14.3 0.110 , 50 0.087 , 50 0.152 , 52.7 0.340 , 50
Rogers TMM4 Dimensions: W x L (mm.) 7.62 x 1.42 5.51 x 4.45 7.24 x 1.83 3.61 x 10.03 10.16 x 0.66 27.94 x 1.19 3.68 x 10.03 3.30 x 5.84 1.37 x 3.30 1.32 x 7.87 8.26 x 1.42 6.48 x 1.42 11.43 x 1.27 25.40 x 1.42
2 oz. copper Dimensions: W xL (in.) 0.300 x 0.056 0.217 x 0.175 0.285 x 0.072 0.142 x 0.395 0.400 x 0.026 1.100 x 0.047 0.145 x 0.395 0.130 x 0.230 0.054 x 0.130 0.052 x 0.310 0.325 x 0.056 0.255 x 0.056 0.450 x 0.050 1.000 x 0.056
l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13
l14
Data Sheet
5
2003-12-22
PTF210301
Test Circuit (cont.)
Component C1, C9 C2, C7, C10 C3, C6 C4, C11 C5 C8 C12 L1 R1, R2 Description 10 F, 35 V Capacitor Capacitor, 0.1 F, 50 V Capacitor, 11 pF Capacitor, 33 pF Capacitor, 2.1 pF Capacitor, 100 F, 50 V Capacitor, 0.8 pF Ferrite, 6 mm Chip Resistor, 100 , 1/8 W 1206 Manufacturer Digi-Key Digi-Key ATC ATC ATC Digi-Key ATC Philips Digi-Key P/N or Comment PC56106 PCC103BCT-ND 100A 110 100A 330 100A 2R1 P5182-ND 100A 0R8 53/3/4.6-452 101ECT-ND
210301_2 for datasheet_1.DWG
Reference Circuit1 (not to scale)
1 Gerber Files for this circuit available on request
Data Sheet
6
2003-12-22
PTF210301
Ordering Information
Type PTF210301A PTF210301E Package Outline 20265 30265 Package Description Standard ceramic, flange Thermally enhanced, flange Marking PTF210301A PTF210301E
Package Outline Specifications Package 20265, Package 30265
(45 X 2.03 [.080]) 7.11 [.280] C L
D
2X 2.590.38 [.107 .015] 15.600.51 [.614.020] FLANGE 9.78 [.385]
S
C L LID 10.160.25 [.400.010]
G
2X R1.60 [.063] 2x 7.11 [.280] 15.23 [.600] 10.160.25 [.400.010] 0.51 [.020] 3.480.38 [.137.015] 0.0381 [.0015] -A20.31 [.800] SPH 1.57 [.062] 4x 1.52 [.060]
1.02 [.040]
ERA-H-30265-2-1-2303
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
7
2003-12-22
PTF210301 Revision History: Previous Version: Page 7 2003-12-22 2003-11-06, Data Sheet Data Sheet
Subjects (major changes since last revision) Combine PTF210301E and PTF210301A onto this Data Sheet. Update Package Outline
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
Edition 2003-12-22 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 2003-12-22

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